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| 2SD2150 Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free NPN Plastic-Encapsulate Transistor SOT-89 Features * Excellent Current-to-Gain Characteristics * Low Collector Saturation Voltage, Typically VCE(SAT)=0.5V(Max.) for IC/IB=2A/0.1A 1 2 3 3.94~4.25 4.4~4.6 1.4~1.8 1.4~1.6 2.COLLECTOR 3.EMITTER 0.36~0.56 0.9~1.1 1.5Ref. 2.9~3.1 0.32~0.52 2.3~2.6 1.BASE 0.35~0.44 Marking: CFQ, CFR, CFS Dimensision in Millimeter Absolute Maximum Ratings at TA=25 C Symbol VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction and Storage Temperature Parameter Value 40 20 6 3 500 -55~+150 Units V V V A mW O o IC PD TJ,Tstg C * These rating are limiting vaules above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance o Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) Min 40 20 6 120 - Typ. 290 25 Max 0.1 0.1 0.5 560 - Unit V V V uA uA V Test Conditions IC=50A,IE=0 IC=1mA,IB=0 IE=50A,IC=0 VCB= 30V,IE=0 VEB=5V,IC=0 IC=2A,IB=100mA VCE= 2 V, IC=100mA VCE= 2 V, IC=500mA ,f=100MHz VCB=10V , f=1MHz,IE=0 *hFE * fT Cob 0.02. MH z pF *Pulse test: tp 300S, CLASSIFICATION Rank Range OF hFE Q 120~270 R 180~390 S 270~560 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 2SD2150 Elektronische Bauelemente NPN Plastic-Encapsulate Transistor Characteristics Curve 10 5 COLLECTOR CURRENT : IC (A) VCE=2V 2 2 1 0.5 0.2 0.1 0.05 0.02 0.01 5m 2m 1m 0 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 1.6 20mA 18mA 16mA 14mA Ta=25C 12mA 10mA 8mA 6mA 5 50mA 45mA 40mA 4 Ta=25C 35mA 30mA 25mA 20mA 15mA 10mA Ta=100C 25C -40C 1.2 3 4mA 0.8 2 5mA 1 IB=0A 1 2 3 4 5 2mA 0.4 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 0.2 0.4 0.6 0.8 IB=0A 1.0 0 0 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=2V Fig.2 Grounded emitter output characteristics ( ) IC/IB=10 Fig.3 Grounded emitter output characteristics ( ) lC/lB=20 5000 2000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2 1 0.5 0.2 0.1 50m 20m 10m 5m Ta=100C 25C -40C 1 0.5 0.2 0.1 0.05 0.02 0.01 5m 2m 1m 1m 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 Ta=100C 25C -40C DC CURRENT GAIN : hFE 1000 500 200 100 50 20 10 Ta=100C 25C -40C 5 1m 2m 5m0.010.02 0.05 0.10.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 2m 1m 2m 5m10m20m50m0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 Fig.4 DC current gain vs. collector current Fig.5 Collector-emitter saturation voltage vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs. collector curren ( ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2 1 0.5 0.2 0.1 50m 20m 10m 5m Ta=100C 25C -40C TRANSITION FREQUENCY : fT (MHz) IC/IB=20 1000 500 200 100 50 20 10 5 2 1 -1 -2 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Ta=25C VCE=2V 1000 500 Ta=25C f=1MHz IE=0A IC=0A Cob 200 100 Cob 50 20 10 0.1 0.2 2m 1m 2m 5m10m20m50m 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 -5 -10 -20 -50-100 -200-500-1000 EMITTER CURRENT : IE (mA) 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2 |
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